A Novel Gate-Level NBTI Delay Degradation Model with Stacking Effect
نویسندگان
چکیده
In this paper, we propose a gate-level NBTI delay degradation model, where the stress voltage variability due to PMOS transistors’ stacking effect is considered for the first time. Experimental results show that our gate-level NBTI delay degradation model results in a tighten upper bound for circuit performance analysis. The traditional circuit degradation analysis leads to on average 59.3% overestimation. The pin reordering technique can mitigate on average 6.4% performance degradation in our benchmark circuits.
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